BAP65-02,135 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website
SOT-23
BAP65-02,135 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Package / Case
SC-79, SOD-523
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
HTS Code
8541.10.00.70
Subcategory
PIN Diodes
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BAP65
Pin Count
2
Power Dissipation-Max
715mW
Diode Type
PIN - Single
Current - Max
100mA
Capacitance @ Vr, F
0.375pF @ 20V 1MHz
Voltage - Peak Reverse (Max)
30V
Breakdown Voltage-Min
30V
Diode Capacitance-Nom
0.65pF
Resistance @ If, F
350mOhm @ 100mA 100MHz
Minority Carrier Lifetime-Nom
0.17 µs
Diode Res Test Current
5mA
Diode Res Test Frequency
100MHz
Diode Forward Resistance-Max
0.95Ohm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.351984
$0.351984
10
$0.332061
$3.32061
100
$0.313265
$31.3265
500
$0.295532
$147.766
1000
$0.278804
$278.804
BAP65-02,135 Product Details
BAP65-02,135 Overview
This device is designed to operate from the maximal current of 100mA.Based on its applicable specifications, this device operates at 30V peak reverse voltage.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 30V.
BAP65-02,135 Features
from a maximum current of 100mA volts at its lowest breakdown voltage of 30V
BAP65-02,135 Applications
There are a lot of NXP USA Inc. BAP65-02,135 applications of RF diodes.
Low loss band-switching in VHF television tuners
Radar systems and modules
Wearables
Car radio
(SAT) TV
Phase detection
Sampling circuits
Set top boxes
Surface-mount band-switching circuits
Series diode for mobile communication transmit/receive switch