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BAP65-05,215

BAP65-05,215

BAP65-05,215

NXP USA Inc.

PIN - 1 Pair Common Cathode 0.425pF @ 20V 1MHz -65°C~150°C TJ 3 Terminations SILICON 260 DUAL Tape & Reel (TR) TO-236-3, SC-59, SOT-23-3

SOT-23

BAP65-05,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
HTS Code 8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP65-05
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 2
Configuration COMMON CATHODE, 2 ELEMENTS
Power Dissipation-Max 250mW
Diode Type PIN - 1 Pair Common Cathode
Application ATTENUATOR; SWITCHING
Current - Max 100mA
JEDEC-95 Code TO-236AB
Capacitance @ Vr, F 0.425pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 30V
Breakdown Voltage-Min 30V
Diode Capacitance-Nom 0.7pF
Resistance @ If, F 350mOhm @ 100mA 100MHz
Diode Capacitance-Max 0.9pF
Minority Carrier Lifetime-Nom 0.17 µs
Diode Res Test Current 5mA
Diode Res Test Frequency 100MHz
Diode Forward Resistance-Max 0.9Ohm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.11400 $0.342
BAP65-05,215 Product Details

BAP65-05,215 Overview


This device is designed to operate from the maximal current of 100mA.In accordance with the applicable device specifications, this device operates at a maximum peak reverse voltage of 30V.Occasionally, this device may run at its lowest possible breakdown voltage of 30V.

BAP65-05,215 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 30V


BAP65-05,215 Applications


There are a lot of NXP USA Inc.
BAP65-05,215 applications of RF diodes.


  • Sensor interfaces of security systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables

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