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BAP70-03,115

BAP70-03,115

BAP70-03,115

NXP USA Inc.

BAP70-03,115 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available on our website

SOT-23

BAP70-03,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Package / Case SC-76, SOD-323
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional Feature HIGH VOLTAGE
HTS Code 8541.10.00.70
Subcategory PIN Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP70
Pin Count 2
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500mW
Diode Type PIN - Single
Application ATTENUATOR
Current - Max 100mA
Capacitance @ Vr, F 0.25pF @ 20V 1MHz
Voltage - Peak Reverse (Max) 50V
Breakdown Voltage-Min 50V
Diode Capacitance-Nom 0.57pF
Resistance @ If, F 1.9Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.25pF
Minority Carrier Lifetime-Nom 1.25 µs
Diode Res Test Current 0.5mA
Diode Res Test Frequency 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
BAP70-03,115 Product Details

BAP70-03,115 Overview


The maximum current of this device is 100mA.This device operates at a maximum reverse voltage of 50V in accordance with its applicable specifications.The device may occasionally run at its lowest breakdown voltage.

BAP70-03,115 Features


from a maximum current of 100mA volts
at its lowest breakdown voltage of 50V

BAP70-03,115 Applications


There are a lot of NXP USA Inc. BAP70-03,115 applications of RF diodes.

  • Radar systems and modules
  • Surface-mount band-switching circuits
  • Bandswitch for TV tuners
  • RF attenuators
  • Laptop and desktop PCs
  • Telematic systems
  • Low diode forward resistance
  • Clamping circuits
  • RF attenuators and switches
  • Two elements in series configuration in a small-sized plastic SMD package

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