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BAP70AM,135

BAP70AM,135

BAP70AM,135

NXP USA Inc.

PIN - 2 Pair Series 0.25pF @ 20V 1MHz -65°C~150°C TJ 6 Terminations SILICON 260 DUAL Tape & Reel (TR) 6-TSSOP, SC-88, SOT-363

SOT-23

BAP70AM,135 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Diode Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Tin (Sn)
Additional Feature LOW DISTORTION
HTS Code 8541.10.00.70
Subcategory Other Diodes
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAP70A
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 4
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Power Dissipation-Max 300mW
Diode Type PIN - 2 Pair Series
Application ATTENUATOR
Current - Max 100mA
Capacitance @ Vr, F 0.25pF @ 20V 1MHz
Forward Voltage-Max 1.1V
Reverse Current-Max 0.1μA
Voltage - Peak Reverse (Max) 50V
Reverse Test Voltage 50V
Resistance @ If, F 1.9Ohm @ 100mA 100MHz
Diode Capacitance-Max 0.25pF
Minority Carrier Lifetime-Nom 1.25 µs
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.349507 $0.349507
10 $0.329722 $3.29722
100 $0.311059 $31.1059
500 $0.293452 $146.726
1000 $0.276842 $276.842
BAP70AM,135 Product Details

BAP70AM,135 Overview


The maximum current of this device is 100mA.This device can be powered by up to 1.1V forward voltage.This device operates at a maximum reverse voltage of 50V in accordance with its applicable specifications.A conversion result is valid if the reverse test voltage is within the range of 50V.

BAP70AM,135 Features


from a maximum current of 100mA volts
1.1V forward voltage


BAP70AM,135 Applications


There are a lot of NXP USA Inc.
BAP70AM,135 applications of RF diodes.


  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
  • Receiver protectors

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