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BAS216,115

BAS216,115

BAS216,115

NXP USA Inc.

DIODE GEN PURP 75V 250MA SOD2

SOT-23

BAS216,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOD-110
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
HTS Code 8541.10.00.70
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAS216
Pin Count 2
JESD-30 Code R-CDSO-R2
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 0.4W
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 75V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Operating Temperature - Junction 150°C Max
Output Current-Max 0.25A
Voltage - DC Reverse (Vr) (Max) 75V
Current - Average Rectified (Io) 250mA DC
Reverse Recovery Time 4ns
Rep Pk Reverse Voltage-Max 85V
Capacitance @ Vr, F 1.5pF @ 0V 1MHz
Non-rep Pk Forward Current-Max 4A
Reverse Current-Max 1μA
RoHS Status ROHS3 Compliant

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