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BF1212WR,115

BF1212WR,115

BF1212WR,115

NXP USA Inc.

MOSFET N-CH DUAL GATE 6V SOT343R

SOT-23

BF1212WR,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 6V
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory FET General Purpose Powers
Current Rating (Amps) 30mA
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Frequency 400MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BF1212
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode DUAL GATE, ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 12mA
Transistor Application AMPLIFIER
Transistor Type N-Channel Dual Gate
Gain 30dB
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.18W
Noise Figure 0.9dB
Voltage - Test 5V
Feedback Cap-Max (Crss) 0.03 pF
RoHS Status ROHS3 Compliant

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