BFQ149,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available on our website
SOT-23
BFQ149,115 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
T[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFQ149
Pin Count
3
Reference Standard
CECC
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 70mA 10V
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
5000MHz
Frequency - Transition
5GHz
Power Dissipation-Max (Abs)
1W
Highest Frequency Band
C B
Noise Figure (dB Typ @ f)
3.3dB @ 500MHz
Power Dissipation Ambient-Max
1W
RoHS Status
ROHS3 Compliant
BFQ149,115 Product Details
BFQ149,115 Description
The BFQ149,115 is a PNP 5 GHz wideband transistor. PNP transistor enclosed in a SOT89 package. It is designed to be used in SMD-based microwave amplifiers, such as radar systems and spectrum analyzers, as well as UHF applications such broadband aerial amplifiers (30 to 860 MHz).
BFQ149,115 Features
Circuits with greater energy efficiency are usually possible. For low-power applications (for example, voltage amplification) in particular, energy consumption can be very much less than for tubes.
Complementary devices available, providing design flexibility including complementary-symmetry circuits, not possible with vacuum tubes.
Very low sensitivity to mechanical shock and vibration, providing physical ruggedness and virtually eliminating shock-induced spurious signals (for example, microphonics in audio applications).
Not susceptible to breakage of a glass envelope, leakage, outgassing, and other physical damage.
No cathode heater (which produces the characteristic orange glow of tubes), reducing power consumption, eliminating delay as tube heaters warm-up, and immune from cathode poisoning and depletion.
Very small size and weight, reducing equipment size.
Large numbers of extremely small transistors can be manufactured as a single integrated circuit.
Low operating voltages compatible with batteries of only a few cells.