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BFQ149,115

BFQ149,115

BFQ149,115

NXP USA Inc.

BFQ149,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available on our website

SOT-23

BFQ149,115 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
T[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFQ149
Pin Count 3
Reference Standard CECC
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 1W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 70mA 10V
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 5000MHz
Frequency - Transition 5GHz
Power Dissipation-Max (Abs) 1W
Highest Frequency Band C B
Noise Figure (dB Typ @ f) 3.3dB @ 500MHz
Power Dissipation Ambient-Max 1W
RoHS Status ROHS3 Compliant
BFQ149,115 Product Details

BFQ149,115 Description


The BFQ149,115 is a PNP 5 GHz wideband transistor. PNP transistor enclosed in a SOT89 package. It is designed to be used in SMD-based microwave amplifiers, such as radar systems and spectrum analyzers, as well as UHF applications such broadband aerial amplifiers (30 to 860 MHz).



BFQ149,115 Features


  • Circuits with greater energy efficiency are usually possible. For low-power applications (for example, voltage amplification) in particular, energy consumption can be very much less than for tubes.

  • Complementary devices available, providing design flexibility including complementary-symmetry circuits, not possible with vacuum tubes.

  • Very low sensitivity to mechanical shock and vibration, providing physical ruggedness and virtually eliminating shock-induced spurious signals (for example, microphonics in audio applications).

  • Not susceptible to breakage of a glass envelope, leakage, outgassing, and other physical damage.

  • No cathode heater (which produces the characteristic orange glow of tubes), reducing power consumption, eliminating delay as tube heaters warm-up, and immune from cathode poisoning and depletion.

  • Very small size and weight, reducing equipment size.

  • Large numbers of extremely small transistors can be manufactured as a single integrated circuit.

  • Low operating voltages compatible with batteries of only a few cells.



BFQ149,115 Applications


  • as a switch

  • as an amplifier


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