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BFT46,215

BFT46,215

BFT46,215

NXP USA Inc.

BFT46,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website

SOT-23

BFT46,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFT46
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode DEPLETION MODE
Power - Max 250mW
FET Type N-Channel
Transistor Application AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V
Drain to Source Voltage (Vdss) 25V
DS Breakdown Voltage-Min 25V
FET Technology JUNCTION
Power Dissipation-Max (Abs) 0.25W
Feedback Cap-Max (Crss) 1.5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 200μA @ 10V
Voltage - Cutoff (VGS off) @ Id 1.2V @ 0.5nA
Current Drain (Id) - Max 10mA
RoHS Status ROHS3 Compliant
BFT46,215 Product Details

BFT46,215 Description


BFT46,215 is a type of symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low-level general-purpose amplifiers in thick and thin-film circuits due to its specific characteristics. It is available in the SOT23 package for the purpose of saving board space.



BFT46,215 Features


Available in the SOT23 package

Drain-source voltage: 25 V

Total power dissipation up to Tamb = 40 ℃

Junction temperature: 150 ℃



BFT46,215 Applications


Low-level general purpose amplifiers


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