BFT46,215 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available on our website
SOT-23
BFT46,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BFT46
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Power - Max
250mW
FET Type
N-Channel
Transistor Application
AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds
5pF @ 10V
Drain to Source Voltage (Vdss)
25V
DS Breakdown Voltage-Min
25V
FET Technology
JUNCTION
Power Dissipation-Max (Abs)
0.25W
Feedback Cap-Max (Crss)
1.5 pF
Current - Drain (Idss) @ Vds (Vgs=0)
200μA @ 10V
Voltage - Cutoff (VGS off) @ Id
1.2V @ 0.5nA
Current Drain (Id) - Max
10mA
RoHS Status
ROHS3 Compliant
BFT46,215 Product Details
BFT46,215 Description
BFT46,215 is a type of symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low-level general-purpose amplifiers in thick and thin-film circuits due to its specific characteristics. It is available in the SOT23 package for the purpose of saving board space.