BFT92,215 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available on our website
SOT-23
BFT92,215 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW NOISE
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BFT92
Pin Count
3
Reference Standard
CECC
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
300mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 14mA 10V
JEDEC-95 Code
TO-236AB
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
25mA
Transition Frequency
5000MHz
Frequency - Transition
5GHz
Power Dissipation-Max (Abs)
0.3W
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f)
2.5dB @ 500MHz
Power Dissipation Ambient-Max
0.3W
RoHS Status
ROHS3 Compliant
BFT92,215 Product Details
BFT92,215 description
PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A.