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BLT70,115

BLT70,115

BLT70,115

NXP USA Inc.

RF Bipolar Transistors TAPE-7 TNS-RFPR

SOT-23

BLT70,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 1996
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2.1W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA 4.8V
Voltage - Collector Emitter Breakdown (Max) 8V
Current - Collector (Ic) (Max) 250mA
Frequency - Transition 900MHz
Power Dissipation-Max (Abs) 2.1W
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 3.5pF
Power Dissipation Ambient-Max 2.1W
Power Gain-Min (Gp) 6dB
RoHS Status ROHS3 Compliant

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