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BS108/01,126

  • BS108/01,126
  • BS108/01,126

BS108/01,126

BS108/01,126

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Box (TB) 5Ohm @ 100mA, 2.8V ±20V 120pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

SOT-23

BS108/01,126 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id 1.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300mA Ta
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 2.8V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
BS108/01,126 Product Details

BS108/01,126 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 120pF @ 25V.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.8V).

BS108/01,126 Features


a 200V drain to source voltage (Vdss)


BS108/01,126 Applications


There are a lot of NXP USA Inc.
BS108/01,126 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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