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BUK9635-100A,118

BUK9635-100A,118

BUK9635-100A,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 34m Ω @ 25A, 10V ±10V 3573pF @ 25V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SOT-23

BUK9635-100A,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 149W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3573pF @ 25V
Current - Continuous Drain (Id) @ 25°C 41A Tc
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±10V
Drain Current-Max (Abs) (ID) 41A
Drain-source On Resistance-Max 0.039Ohm
Pulsed Drain Current-Max (IDM) 165A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 125 mJ
RoHS Status ROHS3 Compliant
BUK9635-100A,118 Product Details

BUK9635-100A,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 125 mJ.A device's maximum input capacitance is 3573pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 41A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 165A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

BUK9635-100A,118 Features


the avalanche energy rating (Eas) is 125 mJ
based on its rated peak drain current 165A.
a 100V drain to source voltage (Vdss)


BUK9635-100A,118 Applications


There are a lot of NXP USA Inc.
BUK9635-100A,118 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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