BUK9875-100A,115

new-10%

Manufacturer part number:BUK9875-100A,115

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 100V 7A SOT-223

Case Package:SOT-23

Datasheet:BUK9875-100A,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	8W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	72m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1690pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±10V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.084Ohm
Pulsed Drain Current-Max (IDM)	28A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	49 mJ
RoHS Status	ROHS3 Compliant