Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	not_compliant
Pin Count	3
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Voltage (Vdss)	40V
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.00193Ohm
Pulsed Drain Current-Max (IDM)	1228A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	1008 mJ
Power Dissipation-Max (Abs)	349W
RoHS Status	ROHS3 Compliant

BUK9E1R9-40E,127

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