BUK9E6R1-100E,127

new-10%

Manufacturer part number:BUK9E6R1-100E,127

Manufacturer:NXP USA Inc.

Description:MOSFET N-CH 100V 120A I2PAK

Case Package:SOT-23

Datasheet:BUK9E6R1-100E,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2012
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	not_compliant
Pin Count	3
Reference Standard	AEC-Q101; IEC-60134
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	349W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.9m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	17460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	133nC @ 5V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±10V
Drain Current-Max (Abs) (ID)	120A
Drain-source On Resistance-Max	0.0061Ohm
Pulsed Drain Current-Max (IDM)	576A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	387 mJ
RoHS Status	ROHS3 Compliant