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MHT1008NT1

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  • MHT1008NT1

MHT1008NT1

MHT1008NT1

NXP USA Inc.

MHT1008NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MHT1008NT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case PLD-1.5W
Packaging Tape & Reel (TR)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 28V
Frequency 2.4GHz~2.5GHz
Transistor Type LDMOS
Gain 18.6dB
Power - Output 12.5W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $9.87658 $9.87658
MHT1008NT1 Product Details

MHT1008NT1 Description

 

MHT1008NT1 transistor is an N-channel MOS field-effect RF power transistor. The special low thermal resistance packaging makes MHT1008NT1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MHT1008NT1 has the common source configuration.

 

 

MHT1008NT1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

MHT1008NT1 Applications

 

ISM applications

DC large signal applications


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