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MMRF1006HR5

MMRF1006HR5

MMRF1006HR5

NXP USA Inc.

MMRF1006HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MMRF1006HR5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case SOT-979A
Packaging Tape & Reel (TR)
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 120V
HTS Code 8541.29.00.75
Peak Reflow Temperature (Cel) 260
Frequency 450MHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 150mA
Transistor Type LDMOS
Gain 20dB
Power - Output 1000W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $543.120000 $543.12
10 $512.377358 $5123.77358
100 $483.374867 $48337.4867
500 $456.014025 $228007.0125
1000 $430.201910 $430201.91
MMRF1006HR5 Product Details

MMRF1006HR5 Description


Designed for wideband pulse and CW applications at up to 500 MHz. The equipment is unequaled and ideal for industrial, radar, and communications applications. This product can be applied in a variety of circumstances and is meant for general use.



MMRF1006HR5 Features


? characterized by large-signal series equivalent impedance parameters


? The capacity to operate CW systems with adequate cooling


? Up to a Maximum of 50 VDD Operation Qualified


? Protection from Integrated ESD


? Created with Push-Pull Operation in Mind


? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range



MMRF1006HR5 Applications


Switching applications


Related Part Number

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