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MMRF1306HR5

MMRF1306HR5

MMRF1306HR5

NXP USA Inc.

MMRF1306HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MMRF1306HR5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case SOT-979A
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 133V
HTS Code 8541.29.00.75
Peak Reflow Temperature (Cel) 260
Frequency 230MHz
[email protected] Reflow Temperature-Max (s) 40
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 24dB
Power - Output 1250W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $231.383337 $231.383337
10 $223.774988 $2237.74988
25 $222.219451 $5555.486275
50 $220.674728 $11033.7364
100 $216.135875 $21613.5875
500 $200.683264 $100341.632
MMRF1306HR5 Product Details

MMRF1306HR5 Description


High VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications, are intended for use with these highly robust devices. They have unique input and output architectures that enable wide frequency usage between 1.8 and 600 MHz.



MMRF1306HR5 Features


  • Unmatched Input and Output Enables Utilization of a Wide Frequency Range

  • The device can be used in a push-pull or single-ended configuration.

  • Qualified Up to 50 VDD Operation Maximum

  • characterized by a longer power range of 30 to 50 V

  • Appropriate Biasing and Suitability for Linear Application

  • Improved Class C Operation via Integrated ESD Protection with a Wider Negative Gate-Source Voltage Range



MMRF1306HR5 Applications


Switching applications


Related Part Number

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