MMRF1306HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MMRF1306HR5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
SOT-979A
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
133V
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
260
Frequency
230MHz
[email protected] Reflow Temperature-Max (s)
40
Current - Test
100mA
Transistor Type
LDMOS (Dual)
Gain
24dB
Power - Output
1250W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$231.383337
$231.383337
10
$223.774988
$2237.74988
25
$222.219451
$5555.486275
50
$220.674728
$11033.7364
100
$216.135875
$21613.5875
500
$200.683264
$100341.632
MMRF1306HR5 Product Details
MMRF1306HR5 Description
High VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications, are intended for use with these highly robust devices. They have unique input and output architectures that enable wide frequency usage between 1.8 and 600 MHz.
MMRF1306HR5 Features
Unmatched Input and Output Enables Utilization of a Wide Frequency Range
The device can be used in a push-pull or single-ended configuration.
Qualified Up to 50 VDD Operation Maximum
characterized by a longer power range of 30 to 50 V
Appropriate Biasing and Suitability for Linear Application
Improved Class C Operation via Integrated ESD Protection with a Wider Negative Gate-Source Voltage Range