MRF101BN datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF101BN Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Package / Case
TO-220-3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated
133V
Current Rating (Amps)
10μA
Frequency
1.8MHz~250MHz
Current - Test
100mA
Transistor Type
LDMOS
Gain
21.1dB
Power - Output
115W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$20.205000
$20.205
10
$19.061321
$190.61321
100
$17.982378
$1798.2378
500
$16.964508
$8482.254
1000
$16.004252
$16004.252
MRF101BN Product Details
MRF101BN Description
MRF101BN Mosfet is a MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes Mosfet MRF101BN suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF101BN has the common source configuration.
MRF101BN Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures