MRF1511NT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRF1511NT1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
PLD-1.5
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
40V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Current Rating (Amps)
4A
Terminal Position
QUAD
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Frequency
175MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRF1511
JESD-30 Code
R-PQSO-N4
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
150mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
13dB
Drain Current-Max (Abs) (ID)
4A
DS Breakdown Voltage-Min
40V
Power - Output
8W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
62.5W
Voltage - Test
7.5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$6.70307
$6.70307
MRF1511NT1 Product Details
MRF1511NT1 Description
MRF1511NT1 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRF1511NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF1511NT1 has the common source configuration.
MRF1511NT1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures