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MRF1K50GNR5

MRF1K50GNR5

MRF1K50GNR5

NXP USA Inc.

MRF1K50GNR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF1K50GNR5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case OM-1230G-4L
Packaging Tape & Reel (TR)
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Peak Reflow Temperature (Cel) 260
Frequency 1.8MHz~500MHz
[email protected] Reflow Temperature-Max (s) 40
Transistor Type LDMOS
Gain 23dB
Power - Output 1500W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $157.97600 $7898.8
MRF1K50GNR5 Product Details

MRF1K50GNR5 Description


These very durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations, allowing them to operate in the 1.8 to 600 MHz frequency range.



MRF1K50GNR5 Features


? Ability to absorb avalanche energy with high drain-source efficiency


? Unmatched input and output allow for the use of a wide frequency range.


? The device can be used either single-ended or push-pull.


? For simplicity of usage, characterized from 30 to 50 V


? Suitable for use with lines



MRF1K50GNR5 Applications


Switching applications


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