MRF1K50GNR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF1K50GNR5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
OM-1230G-4L
Packaging
Tape & Reel (TR)
Published
2009
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Peak Reflow Temperature (Cel)
260
Frequency
1.8MHz~500MHz
[email protected] Reflow Temperature-Max (s)
40
Transistor Type
LDMOS
Gain
23dB
Power - Output
1500W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$157.97600
$7898.8
MRF1K50GNR5 Product Details
MRF1K50GNR5 Description
These very durable devices are intended for use in high VSWR industrial applications, including as laser and plasma exciters, broadcast (analog and digital), aircraft, and radio/land mobile applications. They have mismatched input and output configurations, allowing them to operate in the 1.8 to 600 MHz frequency range.
MRF1K50GNR5 Features
? Ability to absorb avalanche energy with high drain-source efficiency
? Unmatched input and output allow for the use of a wide frequency range.
? The device can be used either single-ended or push-pull.
? For simplicity of usage, characterized from 30 to 50 V