MRF5S9101NR1 Description

MRF5S9101NR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes MRF5S9101NR1 N-channel suitable transistor for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF5S9101NR1 has the common source configuration.

MRF5S9101NR1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

MRF5S9101NR1 Applications

ISM applications

DC large signal applications