MRF6V10010NR4 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF6V10010NR4 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
PLD-1.5
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
100V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
QUAD
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
1.09GHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRF6V10010
JESD-30 Code
R-PQCC-N4
Qualification Status
Not Qualified
Operating Temperature (Max)
200°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
10mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
25dB
DS Breakdown Voltage-Min
100V
Power - Output
10W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$41.290080
$41.29008
10
$38.952906
$389.52906
100
$36.748024
$3674.8024
500
$34.667947
$17333.9735
1000
$32.705611
$32705.611
MRF6V10010NR4 Product Details
MRF6V10010NR4 Description
RF power transistors developed for applications with duty cycles ranging from 1% to 20% at frequencies between 960 and 1400 MHz. This gadget is appropriate for pulsed applications.
MRF6V10010NR4 Features
? characterized by large-signal series equivalent impedance parameters
? Up to a Maximum of 50 VDD Operation Qualified
? Protection from Integrated ESD
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? RoHS conformant
? on reel-to-reel tape. 100 Units per 12 mm, 7 inch Reel, R4 Suffix.