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MRF6V2010GNR1

MRF6V2010GNR1

MRF6V2010GNR1

NXP USA Inc.

MRF6V2010GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF6V2010GNR1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-270BA
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 110V
Frequency 220MHz
Base Part Number MRF6V2010
Current - Test 30mA
Transistor Type LDMOS
Gain 23.9dB
Power - Output 10W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $15.43010 $7715.05
MRF6V2010GNR1 Product Details

MRF6V2010GNR1 Description


Principally intended for CW large-signal output and driver applications at up to 450 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.



MRF6V2010GNR1 Features


  • characterized by large-signal impedance values that are series equivalent

  • qualified up to 50 VDD operations in total

  • Integrated ESD defense

  • polypropylene container capable of 225°C



MRF6V2010GNR1 Applications


Switching applications


Related Part Number

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