MRF6V2010GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF6V2010GNR1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270BA
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Voltage - Rated
110V
Frequency
220MHz
Base Part Number
MRF6V2010
Current - Test
30mA
Transistor Type
LDMOS
Gain
23.9dB
Power - Output
10W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$15.43010
$7715.05
MRF6V2010GNR1 Product Details
MRF6V2010GNR1 Description
Principally intended for CW large-signal output and driver applications at up to 450 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRF6V2010GNR1 Features
characterized by large-signal impedance values that are series equivalent