MRF6V2010NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF6V2010NBR1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-272BC
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
110V
HTS Code
8541.29.00.75
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRF6V2010
JESD-30 Code
R-PDFM-F2
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
30mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
23.9dB
DS Breakdown Voltage-Min
110V
Power - Output
10W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$21.900026
$21.900026
10
$20.660401
$206.60401
100
$19.490945
$1949.0945
500
$18.387684
$9193.842
1000
$17.346872
$17346.872
MRF6V2010NBR1 Product Details
MRF6V2010NBR1 Description
Principally intended for CW large-signal output and driver applications at up to 450 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRF6V2010NBR1 Features
Characterized by parameters for the series equivalent of large-signal impedance