MRF6V2010NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF6V2010NR1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270AA
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
110V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
220MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRF6V2010
JESD-30 Code
R-PDFM-F2
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
30mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
23.9dB
DS Breakdown Voltage-Min
110V
Power - Output
10W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$13.91248
$6956.24
MRF6V2010NR1 Product Details
MRF6V2010NR1 Description
MRF6V2010NR1 RF power transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes MRF6V2010NR1 transistor suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2010NR1 has the common source configuration.
MRF6V2010NR1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures