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MRF6V2150NBR1

MRF6V2150NBR1

MRF6V2150NBR1

NXP USA Inc.

MRF6V2150NBR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF6V2150NBR1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case TO-272BB
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 110V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 220MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF6V2150
JESD-30 Code R-PDFM-F4
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 450mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 25dB
DS Breakdown Voltage-Min 110V
Power - Output 150W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 50V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $48.84238 $24421.19
MRF6V2150NBR1 Product Details

MRF6V2150NBR1 Description

 

MRF6V2150NBR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor MRF6V2150NBR1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRF6V2150NBR1 has the common source configuration.

 

 

MRF6V2150NBR1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

 

 

MRF6V2150NBR1 Applications

 

ISM applications

DC large signal applications


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