MRF6VP11KHR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF6VP11KHR5 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI-1230S-4 GW
Packaging
Tape & Reel (TR)
Published
2010
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
110V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Frequency
130MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRF6VP11
Operating Temperature (Max)
225°C
Current - Test
150mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS (Dual)
Gain
26dB
Power - Output
1000W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$243.66120
$12183.06
MRF6VP11KHR5 Product Details
MRF6VP11KHR5 Description
Primarily intended for pulse wideband applications at up to 150 MHz in frequency. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRF6VP11KHR5 Features
? characterized by large-signal series equivalent impedance parameters
? The capacity to operate CW systems with adequate cooling
? Up to a Maximum of 50 VDD Operation Qualified
? Protection from Integrated ESD
? Created with Push-Pull Operation in Mind
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? on reel-to-reel tape. 150 Units, 56 mm Tape Width, 13 inch Reel; R6 Suffix. 50 Units, 56 mm Tape Width, 13 Inch Reel; R5 Suffix.