MRF6VP41KHR6 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRF6VP41KHR6 Datasheet
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Specifications
Name
Value
Type
Parameter
Package / Case
NI-1230
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN Code
EAR99
Voltage - Rated
110V
Frequency
450MHz
Base Part Number
MRF6VP41
Current - Test
150mA
Transistor Type
LDMOS (Dual)
Gain
20dB
Power - Output
1000W
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MRF6VP41KHR6 Product Details
MRF6VP41KHR6 Description
Designed for wideband pulse and CW applications at up to 500 MHz. The equipment is superior and appropriate for use in industrial, medicinal, and scientific applications. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
MRF6VP41KHR6 Features
? characterized by large-signal series equivalent impedance parameters
? The capacity to operate CW systems with adequate cooling
? Up to a Maximum of 50 VDD Operation Qualified
? Protection from Integrated ESD
? Created with Push-Pull Operation in Mind
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? on reel-to-reel tape. 150 Units per 56 mm, 13 inch Reel, R6 Suffix. R5 Tape and Reel Option is described on page 17 as.