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MRF8P20100HR3

MRF8P20100HR3

MRF8P20100HR3

NXP USA Inc.

Trans RF MOSFET N-CH 65V 5-Pin Case 465M-01 T/R

SOT-23

MRF8P20100HR3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case NI780-4
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
Additional Feature ESD PROTECTION
HTS Code 8541.29.00.75
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.03GHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8P20100
JESD-30 Code R-CDFM-F4
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 400mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 16dB
DS Breakdown Voltage-Min 65V
Power - Output 20W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant

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