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MRF8P20165WHR3

MRF8P20165WHR3

MRF8P20165WHR3

NXP USA Inc.

RF MOSFET Transistors HV8 2GHZ 165W NI780-4

SOT-23

MRF8P20165WHR3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Package / Case NI780-4
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 1.98GHz~2.01GHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8P20165
JESD-30 Code R-CDFM-F4
Qualification Status Not Qualified
Operating Temperature (Max) 125°C
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 550mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 14.8dB
DS Breakdown Voltage-Min 65V
Power - Output 37W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
250 $108.09536 $27023.84

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