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MRF8S8260HR3

MRF8S8260HR3

MRF8S8260HR3

NXP USA Inc.

RF MOSFET Transistors HV8 900MHZ 260W NI880H

SOT-23

MRF8S8260HR3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case NI-880
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Voltage - Rated 70V
HTS Code 8541.29.00.75
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 895MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MRF8S8260
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.5A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 21.1dB
DS Breakdown Voltage-Min 70V
Power - Output 70W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant

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