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MRF8S9102NR3

MRF8S9102NR3

MRF8S9102NR3

NXP USA Inc.

MRF8S9102NR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website

SOT-23

MRF8S9102NR3 Datasheet

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Specifications
Name Value
Type Parameter
Package / Case OM-780-2
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 70V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 920MHz
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PDFP-F2
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 750mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Gain 23.1dB
DS Breakdown Voltage-Min 70V
Power - Output 28W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $55.56000 $55.56
500 $55.0044 $27502.2
1000 $54.4488 $54448.8
1500 $53.8932 $80839.8
2000 $53.3376 $106675.2
2500 $52.782 $131955
MRF8S9102NR3 Product Details

MRF8S9102NR3 Description


Designed for applications requiring CDMA base station frequencies between 865 and 960 MHz. Suitable for all common cellular base station modulation formats in Class AB and Class C. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.



MRF8S9102NR3 Features


? PAR of 100 percent Guaranteed Output Power Capability Tested


? Characterized by Common Source S-Parameters and Series Equivalent Large Signal Impedance Parameters


? Internally Matching for User-Friendliness


? Protection from Integrated ESD


? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range



MRF8S9102NR3 Applications


Switching applications


Related Part Number

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