MRF8S9200NR3 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRF8S9200NR3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
OM-780-2
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
70V
Additional Feature
ESD PROTECTED
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
940MHz
[email protected] Reflow Temperature-Max (s)
40
JESD-30 Code
R-CDFP-F2
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
1.4A
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
19.9dB
DS Breakdown Voltage-Min
70V
Power - Output
58W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.985920
$10.98592
10
$10.364075
$103.64075
100
$9.777430
$977.743
500
$9.223990
$4611.995
1000
$8.701878
$8701.878
MRF8S9200NR3 Product Details
MRF8S9200NR3 Description
Constructed for 920 to 960 MHz CDMA base station applications. Suitable for all common cellular base station modulation formats in Class AB and Class C. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
MRF8S9200NR3 Features
? Protection from Integrated ESD
? Improved Class C Operation with a Wider Negative Gate-Source Voltage Range
? Plastic Package with 225°C Capability
? Created with Digital Predistortion Error Correction Systems in mind