MRF9030LR1

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Manufacturer part number:MRF9030LR1

Manufacturer:NXP USA Inc.

Description:Trans RF MOSFET N-CH 68V 3-Pin NI-360 T/R

Case Package:SOT-23

Datasheet:MRF9030LR1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Package / Case	NI-360
Packaging	Tape & Reel (TR)
Published	2002
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Voltage - Rated	68V
Reach Compliance Code	unknown
Frequency	945MHz
Base Part Number	MRF9030
Current - Test	250mA
Transistor Type	LDMOS
Gain	19dB
Power - Output	30W
Voltage - Test	26V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$37.87000	$37.87
500	$37.4913	$18745.65
1000	$37.1126	$37112.6
1500	$36.7339	$55100.85
2000	$36.3552	$72710.4
2500	$35.9765	$89941.25

Description:

The NXP Semiconductors MRF9030LR1 is a high-performance RF MOSFET transistor designed for use in radio frequency (RF) applications. It is a N-channel enhancement-mode MOSFET with a maximum drain-source voltage of 68V and a maximum drain current of 360mA. The device is housed in a 3-pin NI-360 T/R package and is suitable for use in a wide range of RF applications, including cellular base stations, wireless LANs, and RF amplifiers.

Features:

• High-performance RF MOSFET transistor
• N-channel enhancement-mode MOSFET
• Maximum drain-source voltage of 68V
• Maximum drain current of 360mA
• 3-pin NI-360 T/R package
• Suitable for use in a wide range of RF applications

Applications:

• Cellular base stations
• Wireless LANs
• RF amplifiers
• RF power amplifiers
• RF switches
• RF mixers
• RF detectors
• RF oscillators