MRFE6VP100HR5 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
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MRFE6VP100HR5 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
NI780-4
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
133V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Frequency
512MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VP100
Operating Temperature (Max)
150°C
Current - Test
100mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
26dB
Power - Output
100W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$311.791383
$311.791383
10
$294.142814
$2941.42814
100
$277.493221
$27749.3221
500
$261.786058
$130893.029
1000
$246.967979
$246967.979
MRFE6VP100HR5 Product Details
MRFE6VP100HR5 Description
RF power transistors operating at frequencies between 1.8 to 2000 MHz that are intended for both narrowband and broadband ISM, broadcast, and aerospace applications. These devices can be used in applications where high VSWRs are encountered and are produced utilizing Freescale's enhanced ruggedness platform.
MRFE6VP100HR5 Features
? Broad Operating Frequency Spectrum
? Exceptionally Tough
? Unmatched, Able to Operate in Very Broadband
? Improved Integrated Stability
? Minimal Thermal Resistivity
? Circuitry for integrated ESD protection
? on reel-to-reel tape. 50 Units, 56 mm Tape Width, 13 inch Reel; R5 Suffix.