MRFE6VS25GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFE6VS25GNR1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270BA
Surface Mount
YES
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
133V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
512MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFE6VS25
JESD-30 Code
R-PDFM-F2
Operating Temperature (Max)
150°C
Operating Temperature (Min)
-40°C
Number of Elements
1
Configuration
Single
Operating Mode
ENHANCEMENT MODE
Current - Test
10mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
25.4dB
DS Breakdown Voltage-Min
133V
Power - Output
25W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
Power Dissipation Ambient-Max
25W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$21.46590
$10732.95
MRFE6VS25GNR1 Product Details
MRFE6VS25GNR1 Description
Broadband and narrowband ISM, broadcast, and aerospace applications using RF power transistors operating at frequencies between 1.8 to 2000 MHz. The increased ruggedness platform from NXP was used to create these devices, which can be used in situations where strong VSWRs are present.
MRFE6VS25GNR1 Features
The operational frequency range is broad.
Extreme toughness
Unmatched, capable of operating in a very broad band