MRFG35003N6AT1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MRFG35003N6AT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
PLD-1.5
Surface Mount
YES
Transistor Element Material
GALLIUM ARSENIDE
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated
8V
HTS Code
8541.29.00.75
Subcategory
FET RF Small Signal
Terminal Position
QUAD
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Frequency
3.55GHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MRFG35003
JESD-30 Code
R-PQSO-N4
Qualification Status
Not Qualified
Operating Temperature (Max)
85°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Current - Test
180mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
pHEMT FET
Gain
10dB
DS Breakdown Voltage-Min
8V
Power - Output
450mW
FET Technology
HIGH ELECTRON MOBILITY
Voltage - Test
6V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$8.27473
$8.27473
MRFG35003N6AT1 Product Details
MRFG35003N6AT1 Description
Designed to operate at frequencies between 500 and 5000 MHz in WLL/MMDS/BWA or UMTS driver applications. Unmatched and appropriate for Class AB Customer Premise Equipment (CPE) applications, the device. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
MRFG35003N6AT1 Features
? Excellent Group Delay and Phase Linearity Characteristics
? High Linearity, High Gain, and High Efficiency
? RoHS conformant
? on reel-to-reel tape. 1000 Units per 12 mm, 7 inch Reel, T1 Suffix.