MW6S010NR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP USA Inc. stock available on our website
SOT-23
MW6S010NR1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Package / Case
TO-270AA
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
68V
HTS Code
8541.29.00.75
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
960MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MW6S010
JESD-30 Code
R-PDFM-F2
Qualification Status
Not Qualified
Operating Temperature (Max)
225°C
Number of Elements
1
Configuration
SINGLE
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
125mA
Transistor Application
AMPLIFIER
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
18dB
DS Breakdown Voltage-Min
68V
Power - Output
10W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
61.4W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$13.94204
$6971.02
MW6S010NR1 Product Details
MW6S010NR1 Description
MW6S010NR1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MW6S010NR1 MOSFET suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MW6S010NR1 has the common source configuration.
MW6S010NR1 Features
Qualified Up to a Maximum of 32 VDD Operation
On-Chip RF Feedback for Broadband Stability
Integrated ESD Protection
Characterized with Series Equivalent Large-Signal Impedance Parameters