PBLS2003S,115

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PBLS2003S,115

Manufacturer part number:PBLS2003S,115

Manufacturer:NXP USA Inc.

Description:PBLS2003S,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PBLS2003S,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e4
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	NICKEL PALLADIUM GOLD
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code	8541.21.00.95
Subcategory	Other Transistors
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	PBLS2003
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	1.5W
Transistor Application	SWITCHING
Polarity/Channel Type	NPN AND PNP
Transistor Type	1 NPN Pre-Biased, 1 PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA 5V / 150 @ 2A 2V
Current - Collector Cutoff (Max)	1μA 100nA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500μA, 10mA / 355mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)	50V 20V
Current - Collector (Ic) (Max)	100mA 3A
Transition Frequency	100MHz
Frequency - Transition	100MHz
Power Dissipation-Max (Abs)	1.5W
Resistor - Base (R1)	10k Ω
Resistor - Emitter Base (R2)	10k Ω
Turn Off Time-Max (toff)	205ns
Turn On Time-Max (ton)	41ns
RoHS Status	ROHS3 Compliant