PBLS4001V,115

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PBLS4001V,115

Manufacturer part number:PBLS4001V,115

Manufacturer:NXP USA Inc.

Description:PBLS4001V,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PBLS4001V,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT IN BIAS RESISTOR RATIO 1
Subcategory	Other Transistors
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	PBLS4001
Pin Count	6
JESD-30 Code	R-PDSO-F6
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	300mW
Transistor Application	SWITCHING
Polarity/Channel Type	PNP
Transistor Type	1 NPN Pre-Biased, 1 PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA 5V / 150 @ 100mA 2V
Current - Collector Cutoff (Max)	1μA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V 40V
Current - Collector (Ic) (Max)	100mA 500mA
Transition Frequency	300MHz
Frequency - Transition	300MHz
Power Dissipation-Max (Abs)	0.3W
Resistor - Base (R1)	2.2k Ω
Resistor - Emitter Base (R2)	2.2k Ω
RoHS Status	ROHS3 Compliant