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PDTA143ZS,126

PDTA143ZS,126

PDTA143ZS,126

NXP USA Inc.

PDTA143ZS,126 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from NXP USA Inc. stock available on our website

SOT-23

PDTA143ZS,126 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Packaging Tape & Box (TB)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number PDTA143
Power - Max 500mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
RoHS Status ROHS3 Compliant

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