PDTB123ES,126

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PDTB123ES,126

Manufacturer part number:PDTB123ES,126

Manufacturer:NXP USA Inc.

Description:PDTB123ES,126 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from NXP USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:PDTB123ES,126 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging	Tape & Box (TB)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	unknown
Base Part Number	PDTB123
Power - Max	500mW
Transistor Type	PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	500mA
Resistor - Base (R1)	2.2 k Ω
Resistor - Emitter Base (R2)	2.2 k Ω
RoHS Status	ROHS3 Compliant