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PDTC114YEF,115

PDTC114YEF,115

PDTC114YEF,115

NXP USA Inc.

PDTC114YEF,115 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from NXP USA Inc. stock available on our website

SOT-23

PDTC114YEF,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
HTS Code 8541.21.00.95
Terminal Position DUAL
Terminal Form FLAT
Base Part Number PDTC114
Pin Count 3
JESD-30 Code R-PDSO-F3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 250mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 47 k Ω
RoHS Status ROHS3 Compliant

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