PDTC115EE,115

new-10%

Manufacturer part number:PDTC115EE,115

Manufacturer:NXP USA Inc.

Description:BRT TRANSISTOR, NPN, 50V, 100MA, 100KOHM / 100KOHM, 3-SOT-416 - More Details

Case Package:SOT-23

Datasheet:PDTC115EE,115 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2003
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	PDTC115
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN RESISTOR
Power - Max	150mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 5V
Current - Collector Cutoff (Max)	1μA
Vce Saturation (Max) @ Ib, Ic	150mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	20mA
Power Dissipation-Max (Abs)	0.15W
Resistor - Base (R1)	100 k Ω
Resistor - Emitter Base (R2)	100 k Ω
RoHS Status	ROHS3 Compliant