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PHD110NQ03LT,118

  • PHD110NQ03LT,118
  • PHD110NQ03LT,118

PHD110NQ03LT,118

PHD110NQ03LT,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.6m Ω @ 25A, 10V ±20V 2200pF @ 25V 26.7nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

PHD110NQ03LT,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 115W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 26.7nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
PHD110NQ03LT,118 Product Details

PHD110NQ03LT,118 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2200pF @ 25V maximal input capacitance.To operate this transistor, you will need a 25V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).

PHD110NQ03LT,118 Features


a 25V drain to source voltage (Vdss)


PHD110NQ03LT,118 Applications


There are a lot of NXP USA Inc.
PHD110NQ03LT,118 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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