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PHD45N03LTA,118

PHD45N03LTA,118

PHD45N03LTA,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 21m Ω @ 25A, 10V ±20V 700pF @ 25V 19nC @ 5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

PHD45N03LTA,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 25V
Avalanche Energy Rating (Eas) 40 mJ
RoHS Status ROHS3 Compliant
PHD45N03LTA,118 Product Details

PHD45N03LTA,118 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 40 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 700pF @ 25V.40A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 160A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (3.5V 10V) reduces this device's overall power consumption.

PHD45N03LTA,118 Features


the avalanche energy rating (Eas) is 40 mJ
based on its rated peak drain current 160A.
a 25V drain to source voltage (Vdss)


PHD45N03LTA,118 Applications


There are a lot of NXP USA Inc.
PHD45N03LTA,118 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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