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PHD63NQ03LT,118

  • PHD63NQ03LT,118
  • PHD63NQ03LT,118

PHD63NQ03LT,118

PHD63NQ03LT,118

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 13m Ω @ 25A, 10V ±20V 920pF @ 25V 9.6nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

PHD63NQ03LT,118 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series TrenchMOS™
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 111W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 25V
Current - Continuous Drain (Id) @ 25°C 68.9A Tc
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 68.9A
Drain-source On Resistance-Max 0.0177Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
PHD63NQ03LT,118 Product Details

PHD63NQ03LT,118 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 920pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 68.9A.There is a peak drain current of 240A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (5V 10V).

PHD63NQ03LT,118 Features


based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)


PHD63NQ03LT,118 Applications


There are a lot of NXP USA Inc.
PHD63NQ03LT,118 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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