PHU11NQ10T,127 Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 35 mJ.A device's maximal input capacitance is 360pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 10.9A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 43.6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

PHU11NQ10T,127 Features

the avalanche energy rating (Eas) is 35 mJ
based on its rated peak drain current 43.6A.
a 100V drain to source voltage (Vdss)

PHU11NQ10T,127 Applications

There are a lot of NXP USA Inc.
PHU11NQ10T,127 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples