PMBFJ109,215 Description

The PMBFJ109,215 is an N-channel junction FET and Symmetrical N-channel junction FETs in a SOT23 package. For use in thick and thin-film circuits, symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) are packaged in a plastic microminiature envelope. The transistors are designed for low-power, switching, or chopping industrial applications.

PMBFJ109,215 Features

• High-speed switching

• Interchangeability of drain and source connections

• Low RDSon at zero gate voltage (＜8Ω for PMBFJ108)

• Small package

PMBFJ109,215 Applications

• Analog switches

• Choppers and commutators

• Audio amplifiers

• Low-power chopper

• Switching

• Thick and thin-film circuits